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These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast ...
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IRFB38N20DPBF ; Power Dissipation (Max). 3.8W (Ta), 300W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ) ; Mounting Type. Through Hole ; Supplier Device Package.
May 31, 2016 · IRFB38N20DPbF. Base part number. Package Type. Standard Pack. Form. Quantity. IRFB38N20DPbF. TO-220. Tube. 50. IRFB38N20DPbF. IRFSL38N20DPbF. TO ...
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HEXFET® power MOSFET suitable for use in high frequency DC-DC converters and plasma display panel. Low gate to drain charge to reduce ...
$1.14
IRFB38N20DPBF by Infineon. Infineon IRFB38N20DPBF. Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.054 Ohm; Id 43A; TO-220AB; Pd 300W; Vgs +/-30V. $ 1.14. Production.
$59.50
Manufacturer Part #. IRFB38N20DPBF. Single N-Channel 200 V 0.054 Ohm 91 nC HEXFET® Power Mosfet - TO-220-3. IRFB38N20DPBF Datasheet. ECAD Model:.
INFINEON TECHNOLOGIES IRFB38N20DPBF | Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB - This product is available in Transfer Multisort Elektronik.
$1.15
IRFB38N20DPBF Infineon Technologies $1.1541 - 200V 43A 54mΩ@10V,26A 5V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS datasheet, price, inventory C386377.
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