Jul 23, 2008 · Absolute Maximum Ratings. Parameter. Units. VDS. Drain-to-Source Voltage. V. VGS. Gate-to-Source Voltage. ID @ TA = 25°C.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications ...
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Specifications ; Transistor Polarity: N-Channel ; Number of Channels: 2 Channel ; Vds - Drain-Source Breakdown Voltage: 20 V ; Id - Continuous Drain Current: 8.9 A.
View IRF8915 by Infineon Technologies Americas Corp. datasheet for technical specifications, dimensions and more at DigiKey.
Part #: IRF8915. Download. File Size: 291Kbytes. Page: 10 Pages. Description: Dual SO-8 MOSFET for POL converters in desktop.
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The Infineon Technologies 1187422-IRF8915 is a dual N-channel MOSFET. It has a drain-source breakdown voltage of 20V and a continuous drain current of 8.9A. The ...
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50PCS IRF8915 F8915 SOP-8 8.9A 20V MOSFET New in Stock. 1 sold. Delivery. Free Shipping. Estimated delivery between Mar 15 - 19. Service Buyer protection.
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IRF8915 ; Current - Continuous Drain (Id) @ 25°C, 8.9A ; Rds On (Max) @ Id, Vgs, 18.3mOhm @ 8.9A, 10V ; Vgs(th) (Max) @ Id, 2.5V @ 250µA ; Gate Charge (Qg) (Max) @ ...
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IRF8915 Specifications ; Input Capacitance (Ciss) (Max) @ Vds, 540pF @ 10V ; Power - Max, 2W ; Operating Temperature, -55°C ~ 150°C (TJ) ; Mounting Type, Surface ...
IRF8915 MOSFET. Datasheet pdf. Equivalent. Type Designator: IRF8915 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...