Oct 27, 2008 · Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 18 mH, Rg = 25 Ω, ...
5.0. A. TC = 100 °C. 3.2. Pulsed drain current a. IDM. 20. Linear derating factor. 0.59. W/°C. Single pulse avalanche energy b.
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Order today, ships today. IRF830AS – N-Channel 500 V 5A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount TO-263 (D2PAK) from Vishay Siliconix.
Ideal for switching applications and boasts a die-on resistance of approximately 1mΩ. Learn More. No ...
Part #: IRF830AS. Download. File Size: 155Kbytes. Page: 10 Pages. Description: Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A).
Vishay IRF830AS is a Silicon MOSFET rated at 500V, 5A, 1.4Ω Rdson(max) in D2PAK (TO-263). Datasheet. Device Parameter, Value feedback*. Manufacturer ...
FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ ...
IRF830A MOSFET. Datasheet pdf. Equivalent. Type Designator: IRF830A Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
