Sponsoredⓘ
DESCRIPTION. Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching,.
IRF830. VDss = 500V. RDS(on). = 1.50. S. ID = 4.5A. Description. Third Generation ... IRF830. Electrical Characteristics @ TJ = 25°C (unless otherwise specified).
In stock
Transistor IRF830 N-Channel MOSFET 500V 4.5A TO-220 ; Maximum Continuous Drain Current, 4.5 A ; Maximum Gate Source Voltage, ±20V ; Power Dissipation, 100 W.
Specifications ; Vds - Drain-Source Breakdown Voltage: 500 V ; Id - Continuous Drain Current: 4.5 A ; Rds On - Drain-Source Resistance: 1.5 Ohms ; Vgs - Gate-Source ...
$1.52
Order today, ships today. IRF830 – N-Channel 500 V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB from Vishay Siliconix. Pricing and Availability on millions of ...
IRF830 PRODUCT INFORMATION. Power MOSFET. vsh-img-product-image. FEATURES. Dynamic dV/dt rating. Repetitive avalanche rated. Fast switching.
POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.5 Simple Drive Requirement ID 4.5AGSDescriptionGTO-220(P)DAPEC MOSFET ...
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power. MOSFETs designed, tested, and guaranteed to ...
In stock
IRF830 "IR" Power MOSFET N-Channel 4.5A 500V; Current Rating: 4.5A; Voltage Rated: 500V; Rds (On): 1.5? Mosfet Type: N-channel. See more About this item.