Apr 22, 2005 · Parameter. Max. Units. VDS. Drain- Source Voltage. -40. V. ID @ TA = 25°C. Continuous Drain Current, VGS @ -10V. -6.0. ID @ TA= 70°C.
IRF7703 Datasheet by Infineon Technologies ; Parameter Min. Typ. Max. Units Conditions ; V · (BR)DSS Drain-to-Source Breakdown Voltage -40 ––– ––– V VGS = 0V, ID = ...
Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ...
-40V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package. Others with the same file for datasheet: IRF7703TR · IRF7703 datasheet pdf International ...
IRF7703 MOSFET. Datasheet pdf. Equivalent. Type Designator: IRF7703 Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum ...
IRF7703 MOSFET P-CH 40V 6A 8-TSSOP Kaimte service the golbal buyer with Fast deliver & Higher quality components! provide IRF7703 price, IRF7703 quality, ...
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The IRF7703 is MOSFET P-CH 40V 6A 8TSSOP, buy IRF7703 from Infineon Technologies at Ovaga Technologies. Check IRF7703 in stock, prices, specifications,
Mar 23, 2024 · IRF7703 International Rectifier datasheet PDF, 9 pages, view IRF7703 Specifications online, MOSFET P-CH 40V 6A 8-TSSOP.
Partname: IRF7703. Description: HEXFET power MOSFET. VDSS = -40V, RDS(on) = 28mOhm, ID = -6.0A @ VGS = -10V. RDS(on) = 45mOhm, ID = -4.8A @ VGS = -4.5V.