IRF7464TRPBF Infineon Technologies MOSFET MOSFT 200V 1.2A 730mOhm 9.5nC datasheet, inventory, & pricing.
IRF7464TRPBF ; Input Capacitance (Ciss) (Max) @ Vds. 280 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 2.5W (Ta) ; Operating Temperature. -55°C ~ 150°C (TJ).
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The IRF7464TRPBF is a N-Channel MOSFET with a drain-source breakdown voltage of 200V and a maximum continuous drain current of 1.2A at 25°C. It has a maximum ...
INTERNATIONAL RECTIFIER IRF7464TRPBF | Transistor: N-MOSFET; unipolar; 200V; 1.2A; 2.5W; SO8 - This product is available in Transfer Multisort Elektronik.
IRF7464TRPBF Specifications ; Technology, MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss), 200V ; Current - Continuous Drain (Id) @ 25°C · 1.2A (Ta) ; Drive ...
INTERNATIONAL RECTIFIER IRF7464TRPBF | Transistor: N-MOSFET; unipolar; 200V; 1.2A; 2.5W; SO8 - This product is available in Transfer Multisort Elektronik.
IRF7464TRPBF Infineon Technologies | Price and Stock from ...
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Mounting Type, Surface Mount ; FET Type, MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss), 200V ; Current - Continuous Drain (Id) @ 25° C · 1.2A ; Rds ...
IRF7464TRPBF ; Package / Case: SO8 ; Vgs(th) (Max) @ Id: 5.5V @ 250μA ; Technology: MOSFET (Metal Oxide) ; Supplier Device Package: 8-SO ; Series: HEXFET?
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