Feb 5, 2001 · Parameter. Max. Units. VDS. Drain- Source Voltage. -12. V. ID @ TA = 25°C. Continuous Drain Current, VGS @ -4.5V. -7.8. ID @ TA= 70°C.
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IRF7325 ; Drain to Source Voltage (Vdss). 12V ; Current - Continuous Drain (Id) @ 25°C · 7.8A ; Rds On (Max) @ Id, Vgs. 24mOhm @ 7.8A, 4.5V ; Vgs(th) (Max) @ Id.
New P-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area ...
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IRF7325 ; Continuous Drain Current (ID), 7.8A ; Drain to Source Voltage (Vdss), 12V ; Input Capacitance, 2.02nF ; Max Power Dissipation, 2W ; Mount, Surface Mount.
IRF7325 Datasheet. Part #: IRF7325PBF. Datasheet: 126Kb/9P. Manufacturer: International Rectifier. Description: HEXFET Power MOSFET. 1 Results.
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IRF7325 8-SO MOSFET 2P-CH 12V 7.8A 8-SOIC ; Drain to Source Voltage (Vdss), 12V ; Current - Continuous Drain (Id) @ 25 C · 7.8A ; Rds On (Max) @ Id Vgs, 24 mOhm @ ...
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IRF7325 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) component with a P-channel configuration designed for applications requiring high ...
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IRF7325 Electronic Components Integrated Circuit, Find Complete Details about IRF7325 Electronic Components Integrated Circuit from Alibaba.com.
Apr 30, 2009 · Description. The IRF6725MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve.