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These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast ...
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IRF630NPBF ; Input Capacitance (Ciss) (Max) @ Vds. 575 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 82W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ).
Jul 23, 2010 · Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) ...
$840.00
Manufacturer Part #. IRF630NPBF. Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - TO-220-3. IRF630NPBF Datasheet. ECAD Model:.
$0.42
IRF630NPBF by Infineon. Infineon IRF630NPBF. Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.3 Ohm; Id 9.3A; TO-220AB; Pd 82W; Vgs +/-20V. $ 0.419. Production. Add to ...
$0.39
IRF630NPBF Infineon Technologies $0.3911 - 200V 9.3A 82W 300mΩ@10V,5.4A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS datasheet, price, ...
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Description. Infineon IRF630NPBF MOSFET, pack of 2. Accessories. Options. Additional information. Weight, 1 lbs. Dimensions, 4 × 4 × 6 in. Condition.
$1.10
The IRF630NPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced ...
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Infineon Technologies AGIRF630NPBFMOSFETs. Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube. Download Datasheet. Symbols and Footprints.
$0.58 to $1.20 In stock
IRF630NPBF ; Continuous Drain Current Id, 9.3 ; Drain Source On State Resistance, 300 ; Drain Source Voltage Vds, 200 ; No. of Pins, 3 ; Operating Temperature Max ...