Dec 11, 2002 · Parameter. Max. Units. ID @ TC = 25°C. Continuous Drain Current, VGS @ 10V (Silicon limited). 210. ID @ TC = 100°C.
Jul 22, 2010 · Description. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
IRF2804S-7PPBF Infineon Technologies MOSFET 40V 1 N-CH HEXFET 1.6mOhms 170nC datasheet, inventory, & pricing.
40V Single N-Channel HEXFET Power MOSFET in a 7-pin D2Pak package. Benefits.
IRF2804S-7PPBF ; Current - Continuous Drain (Id) @ 25°C · 160A (Tc) ; Drive Voltage (Max Rds On, Min Rds On). 10V ; Rds On (Max) @ Id, Vgs. 1.6mOhm @ 160A, 10V ; Vgs ...
Description. Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest.
IRF2804S-7PPbF. 2www.irf.com. S. D. G. S. D. G. Notes: Repetitive rating; pulse width limited by. max. junction temperature. (See fig. 11). Limited by T ...
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design ...
In stock
10pcs IRF2804S F2804S IRF2804STRPBF TO263 40V/75A NEW ; Model. IRF2804S ; Accurate description. 4.8 ; Reasonable shipping cost. 5.0 ; Shipping speed. 4.8.
Part #: IRF2804S. Download. File Size: 285Kbytes. Page: 13 Pages. Description: Advanced Process Technology. Manufacturer: International Rectifier.