Dec 11, 2002 · Parameter. Max. Units. ID @ TC = 25°C. Continuous Drain Current, VGS @ 10V (Silicon limited). 210. ID @ TC = 100°C.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring ...
Aug 27, 2003 · IRF2804L. HEXFET® Power MOSFET. VDSS = 40V. RDS(on) = 2.0mΩЙ. ID = 75A ... IRF2804L. Absolute Maximum Ratings. Parameter. Units. ID @ TC = 25°C.
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N-Channel 40 V 120A (Tc) 143W (Tc) Through Hole TO-220AB. Current - Continuous Drain (Id) @ 25°C 120A (Tc). FET Feature -. Power Dissipation (Max) 143W (Tc).
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance ...
IRF2804L MOSFET. Datasheet pdf. Equivalent. Type Designator: IRF2804L Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
Apr 16, 2024 · IRF2804L. Package: PG-TO262-3. Calculated average failure rate (AFR): tested devices: device hours @ stress conditions: Failed devices ...
IRF2804S-7P, V(dss): 40V; Rds(on): 1.6 MOhm; I(d): 160A; HEXFET power MOSFET in 7-pin D2PAK package. Operational temperature range from -55°C to 175°C.
IRF2804 Datasheet. Part #: IRF2804L. Datasheet: 277Kb/12P. Manufacturer: International Rectifier. Description: HEXFET Power MOSFET. 17 Results.
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30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7862PBF with Tape and Reel Packaging.