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Sep 21, 2010 · Description. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
DESCRIPTION. Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching,.
25. VDS-60V, VGS=OV loss. Drain-to-Source Leakage Current. ΜΑ. 1. 250. VDS-48V, VGS=0V, TJ=150°C. Gate-to-Source Forward Leakage.
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Overseas inventory. IRF1Z44, IR, 05+, N/A, N/A. IRFD220, IR, 01+, DIP-4, Brand new original. IRF7530TR, IR, 05+, SO-8, N/A. IRF646, IR, 05+, N/A, N/A.
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