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Order today, ships today. IRF1607 – N-Channel 75 V 142A (Tc) 380W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of
Sep 22, 2010 · This Stripe Planar design of HEXFET®Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon ...
IRF1607 · RoHS Compliant · Low RDS(on) · Industry-leading quality · Dynamic dv/dt Rating · Fast Switching · Fully Avalanche Rated · 175°C Operating Temperature.
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Equivalent. Type Designator: IRF1607 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 380 W
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve ...
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The IRF1607 is MOSFET N-CH 75V 142A TO220AB, buy IRF1607 from Infineon Technologies at Ovaga Technologies ... With nearly a decade of industry experience, our ...
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Specifications ; Transistor Polarity: N-Channel ; Number of Channels: 1 Channel ; Vds - Drain-Source Breakdown Voltage: 75 V ; Id - Continuous Drain Current: 142 A.
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IRF1607 Original Pulled IR Power MOSFET 142A 75V .0075ohm N-CHANNEL Si TO-220AB ; Condition. Used ; Item Number. 401282980284 ; Est. delivery. Wed, Jun 5 - Mon, ...
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Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve ...
DESCRITION • reliable device for use in a wide variety of applications. • FEATURES • Static drain-source on-resistance: RDS(on) ≤7.5mΩ • Enhancement mode
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