Configuration: Single ; Collector- Emitter Voltage VCEO Max: 1.2 kV ; Collector-Emitter Saturation Voltage: 2 V ; Maximum Gate Emitter Voltage: - 20 V, 20 V.
IHW30N120R2. 1200V. 30A. 1.65V. 175°C. H30R1202. PG-TO-247-3. Maximum Ratings. Parameter. Symbol. Value. Unit. Collector-emitter voltage. VC E. 1200. V. DC ...
IHW30N120R2. 1200V. 30A. 1.65V. 175°C. H30R1202. PG-TO-247-3. Maximum Ratings. Parameter. Symbol. Value. Unit. Collector-emitter voltage. VC E. 1200. V. DC ...
IHW30N120R2 ; Part Status. Obsolete ; IGBT Type. NPT, Trench Field Stop ; Voltage - Collector Emitter Breakdown (Max). 1200 V ; Current - Collector (Ic) (Max). 60 A.
In stock
5pcs/lot H30R1202 IHW30N120R2 TO-247 IGBT ; Sold by. TFDZ ; Returns. Eligible for Return, Refund or Replacement within 30 days of receipt ; Manufacturer, ...
In stock
5PCS IGBT Transistor INFINEON TO-247 IHW30N120R2 H30R1202 ; Quantity. 28 sold. More than 10 available ; Item Number. 401613677818 ; MPN. Does Not Apply ; Brand.
Part #: IHW30N120R2. Download. File Size: 386Kbytes. Page: 12 Pages. Description: Reverse Conducting IGBT with monolithic body diode.
$26.42
10PCS NEW IHW30N120R2 H30R1202 IGBT TO-247 ; Brand. Unbranded ; Model. IHW30N120R2 ; Accurate description. 4.9 ; Reasonable shipping cost. 5.0 ; Shipping speed. 4.9.
Size:579K infineon ihw30n120r2.pdf. IHW30N120R2 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic ...
Infineon IHW30N120R2 technical specifications, attributes, and parameters. Trans IGBT Chip N-CH 1.2KV 30A 3-Pin TO-247 Tube. IGBT Transistors REVERSE CONDUCT ...