HUF75652G3/D. MOSFET – Power, N-Channel,. Ultrafet. 100 V, 75 A, 8 mW. HUF75652G3. Features. • Ultra Low On−Resistance. ♢ rDS(ON) = 0.008 Ω, VGS = 10 V.
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HUF75652G3 ; Input Capacitance (Ciss) (Max) @ Vds. 7585 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 515W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ).
Ultra Low On-Resistance rDS(ON) = 0.008Ω, VGS = 10V; Temperature Compensated PSPICE® and SABER™ Electrical Models; Spice and SABER Thermal Impedance Models ...
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HUF75652G3 onsemi / Fairchild MOSFET 75a 100VN-Ch MOSFET datasheet, inventory, & pricing.
HUF75652G3 Rev. C0. HUF75652G3. Symbol. Features. • Ultra ... HUF75652G3. Page 10. ©2001 Fairchild Semiconductor Corporation. HUF75652G3 Rev. C0. HUF75652G3.
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N-Channel UltraFET® Power MOSFET 100V, 75A, 8mΩ. Key Attributes, Value, Search Similar. Voltage (V). On-State Resistance (milliΩ). Current (A). Package Type ...
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Buy HUF75652G3 - Onsemi - MOSFET Transistor, N Channel, 75 A, 100 V, 0.0067 ohm, 10 V, 4 V RoHS Compliant: Yes. Newark offers fast quotes, same day shipping ...
Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models
HUF75652G3ONSEMI ; Type of transistor. N-MOSFET ; Technology. UltraFET® ; Polarisation. unipolar ; Drain-source voltage. 100V ; Drain current. 75A.