Description. The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) ...

Part #: HGTP10N40E1D. Download. File Size: 37Kbytes. Page: 6 Pages. Description: 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes.

Features, Applications. 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Features. 10A, 400V and 500V VCE(ON): 2.5V Max.

HGTP10N40E1D ; Package / Case, TO-220-3 ; Test Condition, - ; Switching Energy, - ; Td (on/off) @ 25°C · - ; Operating Temperature, -55°C ~ 150°C (TJ).

They feature a discrete anti-parallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region.

HGTP10N40E1D IGBT. Datasheet pdf. Equivalent. Type Designator: HGTP10N40E1D Type: IGBT Type of IGBT Channel: N Maximum Power Dissipation (Pc), W: 75

HGTP10N40E1D. SI N-IGBT transistor. GFX. UCE, 400V. UGE, ±20V. IC, 17.5A. Ptot, 75W. TON/TOFF, 50/400nS. TJ, 150°C. the HGTP10N40E1D is a silicon IGBT-N ...

PDF HGTP10N40E1D Data sheet ( Hoja de datos ) ; Descripción, 10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes ; Fabricantes, Intersil ...

Download Intersil Corporation HGTP10N40E1D pdf datasheet file.