[PDF] UFS Series N-Channel IGBT - 70 A, 600 V - HGTG40N60B3 - Onsemi
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The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The.
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HGTG40N60B3 ; Vce(on) (Max) @ Vge, Ic. 2V @ 15V, 40A ; Power - Max. 290 W ; Switching Energy. 1.05mJ (on), 800µJ (off) ; Input Type. Standard ; Gate Charge. 250 nC.
The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input ...
The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input ...
HGTG40N60B3 Rev. B3. File Number. HGTG40N60B3. 70A, 600V, UFS Series N-Channel IGBT. The HGTG40N60B3 is a MOS gated high voltage switching device combining the ...
30-day returns In stock
This item can be returned in its original condition for a full refund or replacement within 30 days of receipt. You may receive a partial or no refund on ...
30-day returns In stock
This item can be returned in its original condition for a full refund or replacement within 30 days of receipt. You may receive a partial or no refund on ...
70A, 600V, UFS Series N-Channel IGBT The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar ...
$4.80
5pcs HGTG40N60B3 G40N60B3 TO-247 IGBT Transistor new ; Quantity. 45 sold. More than 10 available ; Item Number. 324023103557 ; MPN. Does not apply ; Accurate ...