The HGTG27N120BN is Non−Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family.
Overview. HGTG27N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate ...
The HGTG27N120BN and HGT5A27N120BN are Non-. Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs.
HGTG27N120BN ; Vce(on) (Max) @ Vge, Ic. 2.7V @ 15V, 27A ; Power - Max. 500 W ; Switching Energy. 2.2mJ (on), 2.3mJ (off) ; Input Type. Standard ; Gate Charge. 270 nC.
HGTG27N120BN onsemi / Fairchild IGBT Transistors 72A 1200V NPT Series N-Ch IGBT datasheet, inventory, & pricing.
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FAIRCHILD SEMICONDUCTOR HGTG27N120BN IGBT N 72A 1200V TO-247: Amazon.com: Industrial & Scientific.
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onsemiHGTG27N120BNIGBT Chip. Trans IGBT Chip N-CH 1200V 72A 500W 3-Pin(3+Tab) TO-247 Tube. Download Datasheet. Symbols and Footprints. Buy Options
Manufacturer no.: HGTG27N120BN ; HTS code: 8541210095 ; Package, TO-247 ; Transistor Polarity, N ; Maximum Collector Emitter Voltage, 1200V.
Part #: HGTG27N120BN. Download. File Size: 178Kbytes. Page: 8 Pages. Description: 72A, 1200V, NPT Series N-Channel IGBT.
HGTG27N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate ...
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