The HGTG11N120CND is a Non− Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family.
HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate ...
The HGTG11N120CND is a Non-Punch Through (NPT). IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best.
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The HGTG11N120CND is a 1200V N-channel IGBT with anti-parallel hyper fast diode. It is in a non-punch through (NPT) IGBT design. This NPT series is a new ...
$3.61
HGTG11N120CND onsemi $3.6121 - 298W 43A 1.2kV NPT(非穿通型) TO-247AC-3 IGBTs ROHS datasheet, price, inventory C11755.
$4.00
HGTG11N120CND onsemi US$4.0044 - 298W 43A 1.2kV NPT(非穿通型) TO-247AC-3 IGBTs ROHS datasheet, price, inventory C11755.