The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of. MOSFETs and bipolar transistors.
HGTD3N60C3S, HGTP3N60C3 Datasheet by ON Semiconductor ; ICE, COLLECTOR TO EMITTER CURRENT (A) ; tfI, FALL TIME (ns) ; = 10V OR 15V ; TJ · = 150oC, RG = 82Ω, L = 1mH, ...
The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
SGD 0.75
Order today, ships today. HGTD3N60C3 – IGBT 600 V 6 A 33 W Through Hole IPAK from Harris Corporation. Pricing and Availability on millions of electronic ...
HGTD3N60C3S Datasheet - 6A/ 600V/ UFS Series N-Channel IGBTs
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Part Number, HGTD3N60C3S. Manufacturer, Intersil Corporation. Description, 6A/ 600V/ UFS Series N-Channel IGBTs. Published, Mar 23, 2005.
HGTD3N60C3S Transistor Datasheet, HGTD3N60C3S Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog.
HGTD3N60C3 · HARRIS-HGTD3N60C3 Datasheet 227Kb / 9P, 6A, 600V, UFS Series N-Channel IGBTs. HGTD3N60C3S · HARRIS-HGTD3N60C3S Datasheet 227Kb / 9P, 6A, 600V, UFS ...
TRY 201.46
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