The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor.
The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor.
The HGT5A40N60A4D and HGT1Y40N60A4D are MOS gated high voltage switching devices combining the best features of a MOSFET and a bipolar transistor. These.
Out of stock
Buy 10Pcs HGTG40N60A4D or HGT5A40N60A4D 40N60A4D TO-247 63A 600V N-Channel IGBT with Anti-Parallel Hyperfast Diode at Aliexpress for .
The is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a ...
Buy 10PCS HGTG40N60A4D TO-247 HGT5A40N60A4D 40N60A4D TO247 63A 600V N-Channel IGBT with Anti-Parallel Hyperfast Diode free delivery at Aliexpress for .
HGT5A40N60A4D Datasheet(HTML) 1 Page - Intersil Corporation
html.alldatasheet.com › html-pdf › HGT...
Intersil Corporation 2000. HGT5A40N60A4D. 600V, SMPS Series N-Channel IGBT with. Anti-Parallel Hyperfast Diode. The HGT5A40N60A4D is a MOS gated high voltage.
Details for hgt5a40n60a4d by Intersil Corporation. Find hgt5a40n60a4d price and stock, hgt5a40n60a4d alternates, part risk, CAD models and other insights.
HGT5A40N60A4D ; Current - Reverse Leakage @ Vr : 100nA @ 8V ; Impedance (Max) (Zzt) : 30 Ohms ; Operating Temperature : -65°C ~ 150°C (TJ) ; Package / Case : TO-236 ...
HGT5A40N60A4D IGBT. Datasheet pdf. Equivalent. Type Designator: HGT5A40N60A4D Type: IGBT Type of IGBT Channel: N Maximum Power Dissipation (Pc), W: 625
advertiser rating
Authorized Distributor of Discrete Semiconductor Products. Same Day Shipping! Apple & Google Pay.
advertiser rating
Read Customer Reviews & Find Best Sellers. Free 2-Day Shipping w/Amazon Prime.
Compare pricing, inventory, and datasheets for millions of in-stock parts. Research new parts or...