Part #: GT10Q301. Download. File Size: 321Kbytes. Page: 7 Pages. Description: HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS.
GT10Q301. 2004-07-06. 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT10Q301. High Power Switching Applications. Motor Control ...
Sep 3, 2014 · GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications ...
GT10Q301 IGBT. Datasheet pdf. Equivalent. Type Designator: GT10Q301 Type: IGBT + Anti-Parallel Diode Type of IGBT Channel: N Maximum Power Dissipation (Pc), W: ...
GT10Q301(Q) Specifications: Input Type: Standard ; Voltage - Collector Emitter Breakdown (Max): 1200V ; Current - Collector (Ic) (Max): 10A ; Vce(on) (Max) ...
$4.37 In stock
GT10Q301(Q) TO-3P(N) IGBT DUAL 1200V 10A TO-3PN ; Gate Charge, - ; Td (on/off) @ 25C, 300ns/500ns ; Test Condition, 600V 10A 75 Ohm ; Reverse Recovery Time (trr) ...
$4.10
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GT10Q302 Datasheet. 321Kb/7P. Part #: GT10Q301. Manufacturer: Toshiba Semiconductor. Description: HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL ...
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