FEATURES. • Silicon epitaxial planar diode. • Fast switching dual in-series diode, especially suited for applications requiring high voltage capability.
Jan 3, 2006 · GSD2004S-V. GSD2004S-V-GS18 or GSD2004S-V-GS08. DB6. Tape and Reel. Parameter. Test condition. Symbol. Value. Unit. Continuous reverse voltage.
GSD2004S-V-GS08 ; Min Operating Temperature, -65°C ; Max Power Dissipation, 350mW ; Max Repetitive Reverse Voltage (Vrrm), 300V ; Max Reverse Leakage Current, 100nA.