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FZT1151ATA. AEC-Q101. FZT1151A. 7. 12. 1,000. Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable ...
FZT1151ATA from www.digikey.com
In stock
Order today, ships today. FZT1151ATA – Bipolar (BJT) Transistor PNP 40 V 3 A 145MHz 2.5 W Surface Mount SOT-223-3 from Diodes Incorporated.
FZT1151ATA from www.mouser.com
$0.61
FZT1151ATA Diodes Incorporated Bipolar Transistors - BJT PNP High Gain & Crnt datasheet, inventory, & pricing.
FZT1151ATA from www.futureelectronics.com
In stock
Features & Applications. The FZT1151ATA is a PNP Silicon planar medium power high gain Transistor. It has an Operating temperature ranges b/w -55 °C to 150 °C ...
$0.61
FZT1151ATA Diodes Incorporated US$0.9705 - 40V 2.5W 250@500mA,2V 3A PNP SOT-223 Bipolar Transistors - BJT ROHS datasheet, price, ...
FZT1151ATA from www.arrow.com
$0.60
In this video from Diodes Incorporated, get an overview of automotive hall effect sensors, including tech introductions and demonstrations. One year ago.
FZT1151ATA from www.alldatasheet.com
Part #: FZT1151ATA. Download. File Size: 108Kbytes. Page: 4 Pages. Description: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR.
FZT1151ATA from www.avnet.com
$302.63
FZT1151ATA ; Description, Value ; Collector Emitter Voltage Max, 40 ; Continuous Collector Current, 3 ; DC Current Gain hFE Min, 270 ; MSL Level, MSL 1 - Unlimited.
FZT1151ATA from www.jakelectronics.com
Rating (10)
FZT1151ATA Tech Specifications ; Vce Saturation (Max) @ Ib, Ic, 300mV @ 250mA, 3A ; Collector Emitter Breakdown Voltage, 40V ; Transition Frequency, 145MHz.
Buy FZT1151ATA PNP TRANS. 40V 3A 2,5W SOT223 from DIODES INC on Rutronik24. | Get price and stock infos ✓ lead time ✓ datasheets ✓ and parameters ✓.