BVCEO > 75V. •. IC= 4.5A High Continuous Collector Current. •. ICM = 10A Peak Pulse Current. •. Low Saturation Voltage VCE(sat) < 120mV @ 1A.
BVCEO > 75V. •. Maximum continuous current IC= 4.5A. •. 10A pulse current. •. High gain holds up hFE > 300 @ IC=1A. •. Very low equivalent on-resistance; ...
Part #: FZT1053A. Download. File Size: 38Kbytes. Page: 2 Pages. Description: NPN Silicon Planar Medium Power High Gain Transistor.
Mar 2, 2001 · FZT1053A. C. C. E. B. Page 2. ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ... .MODEL FZT1053A. NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100. +. ISE ...
In stock
The FZT1053A is a NPN silicon planar high voltage Bipolar Transistor offers 2.5W collector power dissipation and 4.5A maximum continuous current IC. UL94V ...
In stock
Description. FZT1053A; (PRICE/TC); TRANSISTOR; NPN; 75V; 4.5A; 2.5W; SOT-223; TRANSISTOR POLARITY:NPN; COLLECTOR EMITTER VOLTAGE V(BR)CEO:75V ...
Features. Collector-Emitter Volt (Vceo): 75V; Collector-Base Volt (Vcbo): 150V; Collector Current (Ic): 4.5A; hfe: 300-1200 @ 500mA; Power Dissipation ...
Features and Benefits • BVCEO > 75V • Maximum continuous current IC= 4.5A • 10A pulse current • High gain holds up hFE> 300 @ IC=1A
₹67.34
The FZT1053A is a NPN silicon planar high voltage Bipolar Transistor offers 2.5W collector power dissipation and 4.5A maximum continuous current IC. UL94V ...