Order today, ships today. FQU3P20TU – P-Channel 200 V 2.4A (Tc) 2.5W (Ta), 37W (Tc) Through Hole IPAK from Fairchild Semiconductor.
FQU3P20TU ; Package: IPAK ; Description: 200V 2.4A 2.7Ω@1.2A,10V P Channel IPAK MOSFETs ROHS ; Datasheet: Download ; Source: JLCPCB ; Assembly Type: SMT Assembly. A ...
Rochester Electronics, LLC FQU3P20TU Single MOSFETs Transistors 9.6A ; Description : Power Dissipation-Max: 2.5W Ta 37W Tc, Pulsed Drain Current-Max (IDM): 9.6A.
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FQU3P20TU ; Operating Temperature, -55°C ~ 150°C (TJ) ; Mounting Type, Through Hole ; Supplier Device Package, I-PAK ; Package/Case, TO-251-3 Short Leads, IPak, TO- ...
... FQU3P20TU datasheet. FQU3P20TU manufactured by: Fairchild Semiconductor, 200V P-Channel QFET Others with the same file for datasheet: FQD3P20TF, FQD3P20TM
Details, datasheet, quote on part number: FQU3P20TU ; Mounting Type, Through Hole ; FET Type, MOSFET P-Channel, Metal Oxide ; Drain to Source Voltage (Vdss), 200V.
Part No: FQU3P20TU · Manufacturer: Fairchild Semiconductor · In Stock: 15384 · Description: P-CHANNEL POWER MOSFET · Shipping Date: 2024/5/31 · Datasheet: FQU3P20TU ...
FQU3P20TU Specifications ; gate charge (qg) (max) @ vgs: 8 nC @ 10 V ; drain to source voltage (vdss):, 200 V ; input capacitance (ciss) (max) @ vds: 250 pF @ 25 V.
Fairchild/ON Semiconductor ~ FQU3P20TU ; Technology, MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss), 200V ; Current - Continuous Drain (Id) @ 25°C · 2.4A (Tc).
FQU3P50TU MOSFET. Datasheet pdf. Equivalent. Type Designator: FQU3P50TU Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation ...