FQU2N80TU ; Package: IPAK ; Description: 800V 1.8A 6.3Ω@900mA,10V N Channel IPAK MOSFETs ROHS ; Datasheet: Download ; Source: JLCPCB ; Assembly Type: SMT Assembly. A ...

Technical Specifications ; Current Rating, 1.8 A ; Drain to Source Breakdown Voltage, 800 V ; Drain to Source Resistance, 6.3 Ω ; Drain to Source Voltage (Vdss) ...

... FQU2N80TU datasheet. FQU2N80TU manufactured by: Fairchild Semiconductor, 800V N-Channel QFET Others with the same file for datasheet: FQD2N80TF, FQD2N80TM

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®'s proprietary planar stripe and DMOS technology. This advanced.

Part No. FQD2N80 FQU2N80 FQD2N80TF FQD2N80TM FQU2N80TU. Description, 800V N-Channel MOSFET TRANSISTOR|MOSFET|N-CHANNEL|800VV(BR)DSS|1.8AI(D)|TO ...

FQU2N80TU — MOSFET N-CH 800V 1.8A IPAK. Discrete Semiconductor Products » MOSFETs - Single · Suppliers of «FQU2N80TU» · Hide Company Information ...

Symbol Parameter Test Conditions Min Typ Max Unit. Off Characteristics. BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA800 -- -- V. ∆BVDSS.

Part No. FQD2N80 FQU2N80 FQD2N80TF FQD2N80TM FQU2N80TU. Description, 800V N-Channel MOSFET TRANSISTOR|MOSFET|N-CHANNEL|800VV(BR)DSS|1.8AI(D)|TO-252AA

FQU2N80 MOSFET. Datasheet pdf. Equivalent. Type Designator: FQU2N80 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): ...