Symbol Parameter Test Conditions Min Typ Max Unit. Off Characteristics. BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA800 -- -- V. ∆BVDSS.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

FQU2N80 datasheet, FQU2N80 pdf, FQU2N80 data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, 800V N-Channel MOSFET.

FQU2N80-VB Datasheet. NdChannel 800V (DdS) Super Junction Power MOSFET. FQU2N80-VB www.VBsemi.com. 1. TO-251. S. G. D. Drain Connected to. Drain-Ta. Top View b.

FQU2N80 MOSFET. Datasheet pdf. Equivalent. Type Designator: FQU2N80 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): ...

The FQU2N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor ...

FQU2N80, TO251, 800V, 30（±V）, 3.5V, 2A. Similar type recommendation. VBFB18R02S. TO251. 800V. 30（±V）. 3.5V. 2A. View all products>>. Product Center · MOSFET ...

U2N80 Datasheet. Part #: FQU2N80. Datasheet: 639Kb/9P. Manufacturer: Fairchild Semiconductor. Description: 800V N-Channel MOSFET. 4 Results.

FQD2N80 MOSFET. Datasheet pdf. Equivalent. Type Designator: FQD2N80 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): ...