This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor's proprietary planar stripe and DMOS technology.
In stock
FQPF2N80 ; Input Capacitance (Ciss) (Max) @ Vds. 550 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 35W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
In stock
Features a 177A continuous drain current, 2.8mΩ at 10V RDS(ON), and 100V drain-to-source voltage.
This N−Channel enhancement mode power MOSFET is produced using onsemi's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has ...
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced.
Out of stock
FQPF2N80 onsemi. Enlarge. Manufacturer: onsemi. Mfg #: FQPF2N80. Richardson RFPD #: FQPF2N80. Description: Power MOSFET Transistor. Min/Mult: 1,000/1. Datasheet ...
FQPF2N80. Units. VDSS. Drain-Source Voltage. 800. V. ID. Drain Current. - Continuous (TC = 25°C). 1.5. A. - Continuous (TC = 100°C). 0.95. A. IDM. Drain Current.
€1.75
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to ...
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON ...
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®'s proprietary planar stripe and DMOS technology. This advanced.