$9.99 delivery 30-day returns
Specifications ; Vds - Drain-Source Breakdown Voltage: 600 V ; Id - Continuous Drain Current: 2 A ; Rds On - Drain-Source Resistance: 4.7 Ohms ; Vgs - Gate-Source ...
Dec 1, 2013 · This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology.
$18 delivery 30-day returns
FQPF2N60C ; Input Capacitance (Ciss) (Max) @ Vds. 235 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 23W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor's proprietary planar stripe and DMOS technology.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
$0.37 30-day returns
FQPF2N60C onsemi $0.3707 - 600V 2A 4.7Ω@10V,1A 23W 4V@250uA N Channel TO-220F-3 MOSFETs ROHS datasheet, price, inventory C87915.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse ...
$8.60 30-day returns In stock
IndustrialField 10pcs FQPF2N60C 2N60C 2N60 600V 2A MOSFET N-Channel transistor TO-220F: Amazon.com: Industrial & Scientific.
FQPF2N60C MOSFET. Datasheet pdf. Equivalent. Type Designator: FQPF2N60C Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
Free delivery over $150 60-day returns
The FQPF2N60C is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been ...