This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced.
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor's proprietary planar stripe and DMOS technology.
FQP9N30. Units. VDSS. Drain-Source Voltage. 300. V. ID. Drain Current. - Continuous (TC = 25°C). 9.0. A. - Continuous (TC = 100°C). 5.7. A. IDM. Drain Current.
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FQP9N30 Specifications ; Technology, MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss), 300V ; Current - Continuous Drain (Id) @ 25°C · 9A (Tc) ; Drive Voltage ( ...
FQP9N30 is a Power MOSFET Transistor. Manufacturer, ON Semiconductor. Category, Power MOSFETs. Datasheet, Datasheet PDF Document. FQP9N30 - Properties ...
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(1) · $1.83
FQP9N30 Features 9.0 A, 300 V, RDS(on) = 450 m (Max.) @ VGS = 10 V,FQP9N30 DescriptionThis N−Channel enhancement mode power MOSFET is producedusing O.