May 1, 2001 · FQP85N06. Units. VDSS. Drain-Source Voltage. 60. V. ID. Drain Current. - Continuous (TC = 25 ... is Limited by R DS(on). ※ Notes : 1. TC = 25 ...
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor's proprietary planar stripe and DMOS technology.
DS. G. S. D. Absolute Maximum Ratings TC = 25°C unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FQP85N06. Unit. VDSS. Drain-Source Voltage.
Specifications ; Vds - Drain-Source Breakdown Voltage: 60 V ; Id - Continuous Drain Current: 85 A ; Rds On - Drain-Source Resistance: 10 mOhms ; Vgs - Gate-Source ...
Missing: DS | Show results with:DS
FQP85N06 Hoja de datos, FQP85N06 datasheet, Fairchild Semiconductor - 60V N-Channel MOSFET, Hoja Técnica, FQP85N06 ... • 85A, 60V, RDS(on) = 0.010Ω @VGS = 10 V. • ...
FQP85N06 N-Channel QFET MOSFET November 2013 FQP85N06 N-Channel QFET MOSFET 60 V, 85 A, 10 m Description Features 85 A, 60 V, R = 10 m (Max.) V = 10 V, DS ...
FQP85N06 May 2001 QFET FQP85N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using ...
DS Breakdown Voltage-Min 60.0 V FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3 JESD-609 Code e3. Number of Elements ...
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FQP85N06 Datasheet(HTML) 3 Page - Fairchild Semiconductor ; DS = 30V. V ; DS = 48V. ※ Note : I ; G ·, Total Gate Charge [nC]. 10 ; iss = Cgs + Cgd (Cds = shorted).