This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been ...

Dec 1, 2013 · This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology.

FQI8N60C/D. FQB8N60C / FQI8N60C. — N-Channel QFET. ®. MOSFET. FQB8N60C / FQI8N60C. N-Channel QFET® MOSFET. 600 V, 7.5 A, 1.2 Ω. Description. This N-Channel ...

FQI8N60C Product details ... These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS ...

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

FQI8N60C datasheet, FQI8N60C pdf, FQI8N60C data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, 600V N-Channel Advance Q-FET C-Series.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse ...

www.DataSheet.co. · 1. Repetitive Rating : Pulse width limited by maximum junction temperature · 2. L = 7.3mH, IAS = 7.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = ...

FQI8N60C. Packaging: Tube. Brand: onsemi / Fairchild. Configuration: Single. Fall Time: 64.5 ns. Forward Transconductance - Min: 8.7 S. Height: 4.83 mm. Length ...

FQI8N60C MOSFET. Datasheet pdf. Equivalent. Type Designator: FQI8N60C Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation ( ...