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FQI10N20TU, 58201, 12; 2008, Fairchild, TO-262. FQI10N60, 58201, 12; 2008, Fsc, TO-262. FQI10N60C, 100000, 11-12; 12; 14; 15br; 2008; 2011; 2013; 2015br; 2016 ...
FQI10N20TU. 8 Star Electronics. 58201, 12, FAIRCHILD, TO-262. Part information. These N-Channel enhancement mode power field effect transistors are produced ...
FQI10N20TU. Power Field-Effect Transistor, 10A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3.
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Description : MOSFET N-CH 500V 9A I2PAK; FET Type:MOSFET N-Channel Metal Oxide; FET Feature:Standard; Drain to Source Voltage (Vdss):500V; ...
Description : MOSFET N-CH 80V 16.5A I2PAK; FET Type:MOSFET N-Channel Metal Oxide; FET Feature:Standard; Drain to Source Voltage (Vdss):80V; ...
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