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Specifications ; Vds - Drain-Source Breakdown Voltage: 200 V ; Id - Continuous Drain Current: 5.7 A ; Rds On - Drain-Source Resistance: 690 mOhms ; Vgs - Gate- ...
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Order today, ships today. FQD7P20TM – P-Channel 200 V 5.7A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA from onsemi. Pricing and Availability on millions ...
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This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse ...
This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been ...
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Power MOSFET, P-Channel, QFET®, -200 V, -5.7 A, 690 mΩ, DPAK. Key Attributes, Value, Search Similar. Voltage (V). On-State Resistance (milliΩ). Current (A).
$1.26
Buy FQD7P20TM with fast, free shipping on qualifying orders. View datasheets, stock and pricing, or find other MOSFETs.
FQD7P20TM onsemi $0.9296 - 200V 5.7A 690mΩ@10V,2.85A 5V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS datasheet, price, inventory C353858.
This P−Channel enhancement mode power MOSFET is produced using onsemi's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has ...
$0.52
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology.
$1,220.72
FQD7P20TM ; Drain Source On State Resistance, 690 ; Drain Source Voltage Vds, 200 ; MSL Level, MSL 1 - Unlimited ; No. of Pins, 3 ; Operating Temperature Max, 150.