These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

FQD4P25 / FQU4P25. Units. VDSS. Drain-Source Voltage. -250. V. ID. Drain Current. - Continuous (TC = 25°C). -3.1. A. - Continuous (TC = 100°C). -1.96. A. IDM.

FQD4P25, FQU4P25 Datasheet by onsemi · 1. Repetitive Rating : Pulse width limited by maximum junction temperature · 2. L = 46.6mH, IAS = -3.1A, VDD = -50V, RG = ...

onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its ...

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in ...

FQD4P40P-Channel QFET MOSFET-400 V, -2.7 A, 3.1 Features -2.7 A, -400 V, RDS(on) = 3.1 (Max.) @ VGS = -10 V,ID = -1.35 ADescription Low Gate Charge (Typ. 18 nC) ...

s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 25 volts ; rDS(on): 0.0230 ohms ; Package Type: 3 X 1.90 MM, ROHS COMPLIANT, MICROFET-6 ...

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Nov 27, 2023 · FQD4P25 ON Semiconductor datasheet PDF, 8 pages, view FQD4P25 Specifications online, P-Channel QFET® MOSFET -250V, -3.1A, 2.1Ω, ...