This P−Channel enhancement mode power MOSFET is produced using ONSemiconductor's proprietary planar stripe and DMOS technology.
Description. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®'s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche ...
FQD3P50 onsemi Transistors parts available at DigiKey.
This P-Channel enhancement mode power MOSFET is produced using. ON. Semiconductor's proprietary planar stripe and DMOS technology. This advanced.
FQD3P50 DataSheet - Fairchild Semiconductor - Datasheets360.com
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FQD3P50 SPECIFICATIONS ; Drain-source On Resistance-Max, 4.9 ohm ; DS Breakdown Voltage-Min, 500.0 V ; FET Technology, METAL-OXIDE SEMICONDUCTOR ; JEDEC-95 Code, TO ...