This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche ...
Symbol Parameter Test Conditions Min Typ Max Unit. Off Characteristics. BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA800 -- -- V. ∆BVDSS.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche ...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®'s proprietary planar stripe and DMOS technology. This advanced MOSFET ...
FQD2N80 / FQU2N80. Units. VDSS. Drain-Source Voltage. 800. V. ID. Drain Current. - Continuous (TC = 25°C). 1.8. A. - Continuous (TC = 100°C). 1.14. A. IDM.
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20pcs 2N8O FQD 2N80 FQD2N80 FQD2N80TM TO252 Transistor ; Quantity. More than 10 available ; Item Number. 194391733361 ; MPN. FQD2N80TM ; Brand. Unbranded ; Accurate ...
FQD2N80 Datasheet. Part #: FQD2N80. Datasheet: 639Kb/9P. Manufacturer: Fairchild Semiconductor. Description: 800V N-Channel MOSFET. 6 Results.
FQD2N80. N-Channel QFET® MOSFET. 800 V, 1.8 A, 6.3 Ω. Description. ©2009 Fairchild Semiconductor Corporation. FQD2N80 Rev. C1 www.fairchildsemi.com. 1. FQD2N80.
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Fqd2n80 Datasheet, Distributors and Pricing. Free Fqd2n80 PDF Download. Contains over 70 million datasheets. Fqd2n80, Transistor, Diode, Capacitor. ALLDATASHEET- World's 1st.