FQD2N50TF ; Input Capacitance (Ciss) (Max) @ Vds. 230 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 2.5W (Ta), 30W (Tc) ; Operating Temperature. -55°C ~ 150 ...
These N Channel enhancement mode power field effect transistors are produced using Fairchild,s proprietary, planar stripe, DMOS technology.
FQD2N50TF ; Drain Source On Resistance (RDS(on)@Vgs,Id). 5.3Ω@800mA,10V ; Input Capacitance (Ciss@Vds). 230pF@25V ; Drain Source Voltage (Vdss). 500V ; Continuous ...
Specifications. Mounting Type, Surface Mount. FET Type, MOSFET N-Channel, Metal Oxide. Drain to Source Voltage (Vdss), 500V. Current - Continuous Drain (Id) ...
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FQD2N50TF ; Part Status, Obsolete ; FETType, N-Channel ; Drainto Source Voltage(Vdss), 500 V ; Current-Continuous Drain(Id)@25°C · 1.6A (Tc) ; Drive Voltage(Max Rds ...
500V N-Channel QFET, FQD2N50TF datasheet pdf Fairchild Semiconductor Download FQD2N50TF datasheet from. Fairchild Semiconductor, pdf
FQD2N50TF MOSFET. Datasheet pdf. Equivalent. Type Designator: FQD2N50TF Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation ...
FQD2N50TF, TO252, 650V, 30（±V）, 3.5V, 2A. Similar type recommendation. VBE165R02. TO252. 650V. 30（±V）. 3.5V. 2A. VBE165R02S. TO252. 650V. 30（±V）. 3.5V. 2A.
New Original FQD2N50TF TO-252 One-stop BOM matching service for electronic components ; Send inquiry. Chat now ; Trade Assurance. Built-in order protection ...
D-PAK parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat ...