This P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology.
Order today, ships today. FQD12P10TM-F085 – P-Channel 100 V 9.4A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA from onsemi. Pricing and Availability on ...
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Standard 40V gate level power MOSFET with leading on-resistance for motor driver applications. Learn More.
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Order today, ships today. FQD12P10TM-F085 – P-Channel 100 V 9.4A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA from onsemi. Pricing and Availability on ...
Part #: FQD12P10TM. Download. File Size: 672Kbytes. Page: 9 Pages. Description: 100V P-Channel MOSFET. Manufacturer: Fairchild Semiconductor.
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ONSEMI FQD12P10TM-F085 | Transistor: P-MOSFET; unipolar; -100V; -6A; Idm: -37.6A; 50W; DPAK - This product is available in Transfer Multisort Elektronik.
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FQD12P10TM Specifications ; Technology, MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss), 100V ; Current - Continuous Drain (Id) @ 25°C · 9.4A (Tc) ; Drive ...
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Anncus 100PCS/Lot FQD13N10 FQD12P10TM FQD12N20LTM FQD12N20L FQD12N20 MOSFET TO-252 and Original in Stock - (Color: A, Color: FQD12N20L): Amazon.com: ...
Technical. Continuous Drain Current (ID), 9.4 A. Current Rating, -9.4 A. Drain to Source Breakdown Voltage, -100 V. Drain to Source Resistance, 290 mΩ.
Specifications ; Vds - Drain-Source Breakdown Voltage: 100 V ; Id - Continuous Drain Current: 9.4 A ; Rds On - Drain-Source Resistance: 290 mOhms ; Vgs - Gate- ...