Order today, ships today. FQB9N25CTM – N-Channel 250 V 8.8A (Tc) 3.13W (Ta), 74W (Tc) Surface Mount TO-263 (D2PAK) from Fairchild Semiconductor.

FQB9N25CTM ; Power Dissipation (Pd). 3.13W;74W ; Drain Source On Resistance (RDS(on)@Vgs,Id). 430mΩ@4.4A,10V ; Gate Threshold Voltage (Vgs(th)@Id). 4V@250uA ; Type.

Specifications ; Number of Channels: 1 Channel ; Vds - Drain-Source Breakdown Voltage: 250 V ; Id - Continuous Drain Current: 8.8 A ; Rds On - Drain-Source ...

FQB9N25CTM onsemi / Fairchild MOSFET NCH/250V/9A/QFET datasheet, inventory & pricing.

FQB9N25CTM MOSFET. Datasheet pdf. Equivalent. Type Designator: FQB9N25CTM Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power ...

Quick Details ; Model Number: FQB9N25CTM ; Mounting Type: Surface Mount,Surface Mount ; Rds On (Max) @ Id, Vgs: N/A ; Vgs(th) (Max) @ Id: N/A ; Brand: MOSFET.

FQB9N25CTM ; Stock: 53000 ; Transistor Polarity; N-Channel ; Drain Source Breakdown Voltage; 250 V ; Gate Source Breakdown Voltage; +/- 30 V ; Continuous Drain ...

Quick Details ; Mounting Type: standard ; Model Number: FQB9N25CTM ; Application: standard ; Selling Units: Single item ; Single package size: 21X14X7 cm.

Part No. FQI9N25C FQB9N25C FQB9N25CTM FQI9N25CTU. Description, 250V N-Channel Advance Q-FET C-Series 250V N-Channel MOSFET 8.8 A, 250 V, 0.43 ohm, ...