These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
Features • 5.5A, 500V, RDS(on) = 1.3Ω @VGS = 10 V • Low gate charge ( typical 17 nC) • Low Crss ( typical 11 pF) • Fast switching • 100% avalanche tested
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced ...
FQB6N60 600V N-channel QFET . These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, ...
Nov 3, 2023 · FQB6N60 Fairchild datasheet PDF, 9 pages, view FQB6N60 Specifications online, 600V N-Channel MOSFET.
FQB6N60 / FQI6N60. Units. VDSS. Drain-Source Voltage. 600. V. ID. Drain Current - Continuous (TC = 25°C). 6.2. A. - Continuous (TC = 100°C). 3.9. A. IDM. Drain ...
TRY 130.67
5pcs/lot FQB6N60 6N60 TO-263 6.2A 600V. 1/3. 4. 130,67TL/ lot. 145,04TL10% off. (5 Pieces). Price shown before tax. 5pcs/lot FQB6N60 6N60 TO-263 6.2A 600V.
A$5.87
Buy 5pcs/lot FQB6N60 6N60 TO-263 6.2A 600V at Aliexpress for . Find more , and products. Enjoy ✓Free Shipping Worldwide! ✓Limited Time Sale ✓Easy Return.
FQB6N60TM D?PAK MOSFET N-CH 600V 6.2A D2PAK | SICSTOCK.COM
www.sicstock.com › en-ca › products › f...
In stock
FET Type, MOSFET N-Channel Metal Oxide ; FET Feature, Standard ; Drain to Source Voltage (Vdss), 600V ; Current - Continuous Drain (Id) @ 25 C · 6.2A ; Rds On (Max) ...