FQB60N03L / FQI60N03L. Units. VDSS. Drain-Source Voltage. 30. V. ID. Drain Current. - Continuous (TC = 25°C). 60. A. - Continuous (TC = 100°C). 42.5. A. IDM.
Oct 23, 2002 · 25. 52. nC. Qg(5). Total Gate Charge at 5V. VGS = 0V to 5V. -. 13. 30. nC. Qg(TH). Threshold Gate Charge. VGS = 0V to 1V.
Description, This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. Optimized for switching appl.
Part #: FQB60N03L. Download. File Size: 238Kbytes. Page: 11 Pages. Description: N-Channel Logic Level PWM Optimized Power MOSFET.
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FQB60N03L. October 2002. FQB60N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET ...
5pcs/lot 60N03 FQB60N03L TO-263 In Stock. 1/3. 0. US $1.00/ lot. US $1.1513% off. (5 Pieces). Price shown before tax. Get ...
FQB60N03L October 2002 FQB60N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description This device employs a new advanced MOSFET technology ...
Part #: FQB60N03L. Chat AI.File Size: 287Kbytes. Page: 2 Pages. Description: isc N-Channel MOSFET Transistor. Manufacturer: Inchange Semiconductor Company ...
M/A-COM, Macroblock, Macronix, MagnaChip, Marktech, Martek Power, Marvell, MAS Oy ... FQB60N03L (Fairchild). Electronic component documentation (datasheet) « ...