This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been ...
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FQB33N10TM. Unit. VDSS. Drain-Source Voltage. 100. V. ID. Drain Current. - Continuous (TC = 25°C). 33. A. - Continuous (TC = 100°C). 23. A. IDM. Drain Current.
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FQB33N10TM ; Resistance Drain Source RDS (on); 0.052 Ohms ; Configuration; Single ; Maximum Operating Temperature; + 175 C ; Mounting Style; SMD/SMT ; Package / Case ...
FQB33N10TM MOSFET. Datasheet pdf. Equivalent. Type Designator: FQB33N10TM Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
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