FQB2N60TM ; DESCRIPTION: MOSFET N-CH 600V 2.4A D2PAK ; Manufacturer : ON Semiconductor ; Current - Continuous Drain (Id) @ 25°C : 2.4A (Tc) ; Drain to Source ...
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FQB2N60TM D?PAK MOSFET N-CH 600V 2.4A D2PAK ; Rds On (Max) @ Id Vgs, 4.7 Ohm @ 1.2A 10V ; Vgs(th) (Max) @ Id, 5V @ 250?A ; Gate Charge (Qg) @ Vgs, 11nC @ 10V.
Series: QFET? FET Type: MOSFET N-Channel, Metal Oxide. FET Feature: Standard. Drain to Source Voltage (Vdss):, 600V. Current - Continuous Drain (Id) @ 25～C ...
FQB2N60TM MOSFET. Datasheet pdf. Equivalent. Type Designator: FQB2N60TM Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation ...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
Quick Details ; Supply Voltage: Standard ; Package: standard ; Model Number: FQB2N60TM ; Dissipation Power: Standard ; Application: MP3/MP4 Player.
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Description : MOSFET N-CH 600V 2.4A D2PAK; FET Type:MOSFET N-Channel Metal Oxide; FET Feature:Standard; Drain to Source Voltage (Vdss):600V; ...
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