This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche ...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
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Specification ; Power dissipation. 120W ; Case. TO3PF ; Gate-source voltage. ±30V ; On-state resistance. 0.75Ω ; Mounting. THT.