FQA9N90C-F109. Unit. VDSS. Drain-Source Voltage. 900. V. ID. Drain Current. 9.0. A ... FQA9N90C_F109. Unit. RθJC. Thermal Resistance, Junction-to-Case, Max. 0.45.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET.
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FQA9N90C-F109 ; Current - Continuous Drain (Id) @ 25°C · 9A (Tc) ; Drive Voltage (Max Rds On, Min Rds On). 10V ; Rds On (Max) @ Id, Vgs. 1.4Ohm @ 4.5A, 10V ; Vgs(th) ...
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FQA9N90C_F109. Packaging: Tube. Brand: onsemi / Fairchild. Configuration: Single. Fall Time: 75 ns. Height: 20.1 mm. Length: 16.2 mm. Product Type: MOSFET. Rise ...
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche ...
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FQA9N90C-F109 onsemi $3.6521 - 900V 9A 1.4Ω@10V,4.5A 280W 5V@250uA 1PCSNChannel TO-3P-3 MOSFETs ROHS datasheet, price, inventory C2711.
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The FQA9N90C_F109 is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has ...
Part #: FQA9N90C_F109. Download. File Size: 798Kbytes. Page: 9 Pages. Description: 900V N-Channel MOSFET. Manufacturer: Fairchild Semiconductor.
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Nov 28, 2023 · Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN Tube. Documentation: FQA9N90C-F109 Datasheet PDF (8 Pages). Package Outline Dimension on： P7.
FQA9N90C_F109 MOSFET. Datasheet pdf. Equivalent. Type Designator: FQA9N90C_F109 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...