Vds - Drain-Source Breakdown Voltage: 150 V ; Id - Continuous Drain Current: 90 A ; Rds On - Drain-Source Resistance: 18 mOhms ; Vgs - Gate-Source Voltage: - 25 V, ...
FQA90N15-F109/D. 1. • RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A. • Low ... 4. Essentially independent of operating temperature typical characteristics.
FQA90N15 ; Input Capacitance (Ciss) (Max) @ Vds. 8700 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 375W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ).
FQA90N15. N Channel Power MOSFET. General Description. These N Channel ... FQA90N15. Units. VDSS. Drain Source Voltage. 150. V. ID. Drain Current Continuous ...
These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild's proprietary, planar stripe,. DMOS technology.
$1,737.00
Buy onsemi FQA90N15 in Tube. Trans MOSFET N-CH 150V 90A 3-Pin(3+Tab) TO-3P ... FQA90N15. onsemi. Manufacturer Part #. FQA90N15. Trans MOSFET N-CH 150V ...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. Features • 90A, 150V ...
ONSEMI FQA90N15-F109 | Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN - This product is available in Transfer Multisort Elektronik.
FQA90N15 ; Package: TO-3PN ; Description: 150V 90A 18mΩ@45A,10V 375W null TO-3P MOSFETs ROHS ; Datasheet: Download ; Source: JLCPCB ; Assembly Type: Wave Soldering.
Rating
Specifications ; Product Status, Obsolete, FET Type ; Technology, MOSFET (Metal Oxide), Drain to Source Voltage (Vdss) ; Current - Continuous Drain (Id) @ 25°C ...