Thermal Resistance, Junction-to-Ambient, Max. 40. 6 /?. Symbol. Parameter. FQA28N15. Unit. VDSS. Drain-Source Voltage.
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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET.
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The FQA28N15 is a 150V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology ...
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche ...