This N−Channel Enhancement Mode Power MOSFET is produced using onsemi's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has ...
In stock
Specifications ; Vds - Drain-Source Breakdown Voltage: 100 V ; Id - Continuous Drain Current: 140 A ; Rds On - Drain-Source Resistance: 10 mOhms ; Vgs - Gate-Source ...
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been ...
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET.
In stock
FQA140N10 ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 100 V ; Current - Continuous Drain (Id) @ 25°C · 140A (Tc) ; Drive Voltage (Max Rds On ...
Out of stock
Power MOSFET, N-Channel, QFET®, 100V, 140A, 10mΩ, TO-3P. Key Attributes, Value, Search Similar. Voltage (V). On-State Resistance (milliΩ). Current (A).
Buy onsemi FQA140N10 in Tube. N-Channel 100 V 0.01 Ohm Through Hole Mosfet - TO-3PN from Future Electronics.
$18.83
Sold by. ShunFaiFuda ; Returns. Eligible for Return, Refund or Replacement within 30 days of receipt ; Product Dimensions, 0.39 x 0.39 x 0.39 inches ; Item Weight ...
Specification ; Power dissipation. 375W ; Case. TO3PN ; Gate-source voltage. ±25V ; On-state resistance. 10mΩ ; Mounting. THT.
The FQA140N10 is a N-Channel QFET MOSFET 100V, 140A, 10mΩ This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's ...
Fqa140n10 Download — Fqa140n10 Datasheet. You can find Fqa140n10 Datasheet. Fqa140n10 pinout. You can find...