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FGA25N120ANTDTU-F109. FGA25N120ANTDTU. TO-3PN. Tube. N/A. N/A. 30. Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted. Symbol. Parameter.
Specification ; Power dissipation. 125W ; Case. TO3P ; Gate-emitter voltage. ±20V ; Pulsed collector current. 90A ; Mounting. THT.
ONSEMI FGA25N120ANTDTU-F109 | Transistor: IGBT; 1,2kV; 25A; 125W; TO3P ... Marque du fabricant: FGA25N120ANTDTU-F109. Référence TME: FGA25N120ANTD-F109. DÉTAILS.
FGA25N120ANTDTU-F109 onsemi / Fairchild - Mouser Electronics
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Specifications ; Mounting Style: Through Hole ; Configuration: Single ; Collector- Emitter Voltage VCEO Max: 1.2 kV ; Collector-Emitter Saturation Voltage: 2.65 V.
FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2. F. G ... F. G. A25N120ANTD. /FGA25N120ANTD_F109. 1200V NPT T ... VGE = 0V, f = 1MHz. TC = 25°C. Crss. Capacita nce [pF].
Missing: F109 | Show results with:F109
easy parallel operation. ... cation such as induction heating, microwave oven, etc. • Extremely enhanced avalanche capability. TO-3PN
ONSEMI FGA25N120ANTDTU-F109 | Transistor: IGBT; 1,2kV; 25A; 125W ... Denominación de fabricante: FGA25N120ANTDTU-F109. Símbolo TME: FGA25N120ANTD-F109. DETALLES.
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Extra 2% off with coins. [5pcs]100%New original: FGA25N120ANTDTU-F109 FGA25N120ANTDTU FGA25N120ANTD FGA25N120 FGA25N120AN 25N120 - IGBT 1200V 50A 312W. 5 | ...
Aug 31, 2018 · The FGA25N120ANTD 1200V NPT (Nonpunch-Through) IGBT offers superior conduction and switching performances, high avalanche ruggedness and ...
FGA25N120ANTD/FGA25N120ANTD F109 Rev. B2. FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT www.fairchildsemi.com. Page 6. Typical Performance ...
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